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Epitaxial growth of Ce2Y2O7 buffer layers for YBa2Cu3O7-δ coated conductors using reel-to-reel DC reactive sputteringFAN, F; LU, Y. M; YING, L. L et al.Physica. C. Superconductivity. 2011, Vol 471, Num 15-16, pp 471-475, issn 0921-4534, 5 p.Article

The optical properties of ZnO/ZnMgO single quantum well grown by P-MBESU, S. C; LU, Y. M; ZHANG, Z. Z et al.Applied surface science. 2008, Vol 254, Num 22, pp 7303-7305, issn 0169-4332, 3 p.Article

N-doping-related room temperature ferromagnetism of electrodeposited ZnCoO filmsCAO, P; ZHAO, D. X; ZHANG, J. Y et al.Physica. B, Condensed matter. 2007, Vol 392, Num 1-2, pp 255-258, issn 0921-4526, 4 p.Article

Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin filmLIU, K. W; MA, J. G; ZHANG, J. Y et al.Solid-state electronics. 2007, Vol 51, Num 5, pp 757-761, issn 0038-1101, 5 p.Article

Super-radiation processes of ZnO/Mg0.1Zn0.9O SQW under high-density excitationWU, C. X; LU, Y. M; SHEN, D. Z et al.Journal of luminescence. 2007, Vol 122-23, pp 405-407, issn 0022-2313, 3 p.Conference Paper

p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LEDZHANG, Z. Z; WEI, Z. P; LU, Y. M et al.Journal of crystal growth. 2007, Vol 301-302, pp 362-365, issn 0022-0248, 4 p.Conference Paper

The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatmentWANG, X. H; YAO, B; ZHANG, Z. Z et al.Semiconductor science and technology. 2006, Vol 21, Num 4, pp 494-497, issn 0268-1242, 4 p.Article

Electrical transport properties in nitrogen-doped p-type ZnO thin filmXIAO, Z. Y; LIU, Y C; LI, B. H et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1522-1526, issn 0268-1242, 5 p.Article

Effect of interface on luminescence properties in ZnO/MgZnO heterostructuresWEI, Z. P; LU, Y. M; SHEN, D. Z et al.Journal of luminescence. 2006, Vol 119-20, pp 551-555, issn 0022-2313, 5 p.Conference Paper

Effects of thermal annealing on the structural and optical properties of MgxZn1 -xO nanocrystalsLI, J. H; LIU, Y. C; SHAO, C. L et al.Journal of colloid and interface science. 2005, Vol 283, Num 2, pp 513-517, issn 0021-9797, 5 p.Article

Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxyLIANG, H. W; LU, Y. M; SHEN, D. Z et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 305-310, issn 0022-0248, 6 p.Conference Paper

P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NOLIANG, H. W; LU, Y. M; SHEN, D. Z et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 1060-1065, issn 0031-8965, 6 p.Conference Paper

Effects of RF power on properties of ZnO thin films grown on Si (0 0 1) substrate by plasma enhanced chemical vapor depositionLI, B. S; LIU, Y. C; SHEN, D. Z et al.Journal of crystal growth. 2003, Vol 249, Num 1-2, pp 179-185, issn 0022-0248, 7 p.Article

Effects of thermal annealing on ZnO films grown by plasma enhanced chemical vapour deposition from Zn(C2H5)2 and CO2 gas mixturesZHI, Z. Z; LIU, Y. C; LI, B. S et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 6, pp 719-722, issn 0022-3727, 4 p.Article

Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor depositionSHAN, C. X; FAN, X. W; ZHANG, J. Y et al.Journal of crystal growth. 2001, Vol 233, Num 4, pp 795-798, issn 0022-0248Article

Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputteringLU, Y. M; HWANG, W. S; LIU, W. Y et al.Materials chemistry and physics. 2001, Vol 72, Num 2, pp 269-272, issn 0254-0584Conference Paper

The effect of fluid loss on the viscoelastic behavior of the lumbar intervertebral disc in compressionLU, Y. M; HUTTON, W. C; GHARPURAY, V. M et al.Journal of biomechanical engineering. 1998, Vol 120, Num 1, pp 48-54, issn 0148-0731Article

A propagation mechanism for chemical vapor deposied β-SiC particlesCHU, C. H; LU, Y. M; HON, M. H et al.Scripta metallurgica et materialia. 1991, Vol 25, Num 7, pp 1685-1688Article

The effect of O2 partial pressure on the photoluminescence of ZnO thin films grown by pulsed laser depositionLU, Y. M; LI, X. P; SU, S. C et al.Journal of luminescence. 2014, Vol 152, pp 254-257, issn 0022-2313, 4 p.Conference Paper

Post-growth annealing study of heavily Ga-doped zinc oxide grown by radio frequency magnetron sputteringPAK, C. M; SU, S. C; LING, C. C et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 13, issn 0022-3727, 135104.1-135104.8Article

Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogenWANG, X. H; YAO, B; FAN, X. W et al.Thin solid films. 2010, Vol 518, Num 12, pp 3428-3431, issn 0040-6090, 4 p.Article

Al-doping effect on structural, transport and optical properties of ZnO films by simultaneous RF and DC magnetron sputteringLU, J. J; TSAI, S. Y; LU, Y. M et al.Solid state communications. 2009, Vol 149, Num 47-48, pp 2177-2180, issn 0038-1098, 4 p.Article

Epitaxial growth and thermal dynamics of CeO2 buffer layer on textured Ni-W substrates for YBCO coated conductorsPAN, C. Y; CAI, C. B; YING, L. L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69840K.1-69840K.5, issn 0277-786X, isbn 978-0-8194-7182-6, 1VolConference Paper

Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO filmsLU, J. J; LU, Y. M; TASI, S. I et al.Optical materials (Amsterdam). 2007, Vol 29, Num 11, pp 1548-1552, issn 0925-3467, 5 p.Article

Structural and electrical characterizations of single tetragonal FeSe on Si substrateWU, X. J; ZHANG, Z. Z; ZHANG, J. Y et al.Journal of crystal growth. 2007, Vol 300, Num 2, pp 483-485, issn 0022-0248, 3 p.Article

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